The IXFH150N17T2 is a high-power N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a continuous drain current of 150A and a drain to source resistance of 12mR. The device is packaged in a TO-247-3 plastic package and is lead-free and RoHS compliant. It is suitable for high-power applications requiring high current and low resistance.
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Ixys IXFH150N17T2 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 150A |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 175V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 14.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 880W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 880mW |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™, HiperFET™, TrenchT2™ |
| Turn-Off Delay Time | 50ns |
| RoHS | Compliant |
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