N-Channel Power MOSFET featuring 1000V drain-source breakdown voltage and 15A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.7 ohm drain-source resistance and 360W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it operates across a wide temperature range from -55°C to 150°C. Key electrical characteristics include a 4.5V nominal gate-source threshold voltage and 4.5nF input capacitance.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXFH15N100 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 700mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Dual Supply Voltage | 1kV |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Nominal Vgs | 4.5V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 700mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 120ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH15N100 Datasheet
Download the complete datasheet for Ixys IXFH15N100 to view detailed technical specifications.
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