N-Channel Power MOSFET, 15A continuous drain current and 1kV drain-source breakdown voltage. Features 760mΩ maximum drain-source on-resistance and 543W maximum power dissipation. Operates from -55°C to 150°C with a 30V gate-source voltage rating. Packaged in a TO-247 plastic through-hole mount with N-CHANNEL polarity.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power543W
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Technical Specifications
Ixys IXFH15N100P technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 760mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 760MR |
| Fall Time | 58ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.14nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 543W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 543W |
| Radiation Hardening | No |
| Rds On Max | 760mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Turn-Off Delay Time | 44ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH15N100P Datasheet
Download the complete datasheet for Ixys IXFH15N100P to view detailed technical specifications.
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