N-Channel Power MOSFET, 15A continuous drain current, 1000V drain-to-source breakdown voltage, and 1.05 Ohm Rds On. This silicon, metal-oxide semiconductor FET features a TO-247 plastic package for through-hole mounting. It offers a maximum power dissipation of 690W and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 30V gate-to-source voltage and 3.25nF input capacitance, with turn-on and turn-off delay times of 28ns and 30ns respectively. This RoHS compliant component is lead-free.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power690W
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Technical Specifications
Ixys IXFH15N100Q3 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1.05R |
| Drain to Source Voltage (Vdss) | 1kV |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.26mm |
| Input Capacitance | 3.25nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 690W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 690W |
| Rds On Max | 1.05R |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 28ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH15N100Q3 Datasheet
Download the complete datasheet for Ixys IXFH15N100Q3 to view detailed technical specifications.
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