IXFH160N15T2

Power Field-Effect Transistor, 160A I(D), 150V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3

PackageTO-247-3

MountingThrough Hole

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Ixys IXFH160N15T2 technical specifications.

Package/Case	TO-247-3
Continuous Drain Current (ID)	160A
Drain to Source Voltage (Vdss)	150V
Drain-source On Resistance-Max	9mR
Input Capacitance	15nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	880W
Mount	Through Hole
Packaging	Rail/Tube
Rds On Max	9mR
RoHS Compliant	Yes
Series	GigaMOS™, HiperFET™, TrenchT2™

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.