N-Channel Power MOSFET, 500V Vds, 16A Continuous Drain Current (ID), and 400mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-247 plastic package for through-hole mounting. Key specifications include a maximum power dissipation of 300W, gate-to-source voltage of 30V, and operating temperatures from -55°C to 150°C. Turn-on delay is 23ns, fall time is 22ns, and turn-off delay is 70ns.
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Ixys IXFH16N50P technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.46mm |
| Input Capacitance | 2.25nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ HiPerFET™ |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 23ns |
| DC Rated Voltage | 500V |
| Width | 5.3mm |
| RoHS | Compliant |
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