IXFH16N50P

N-Channel Power MOSFET, 500V Vds, 16A Continuous Drain Current (ID), and 400mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-247 plastic package for through-hole mounting. Key specifications include a maximum power dissipation of 300W, gate-to-source voltage of 30V, and operating temperatures from -55°C to 150°C. Turn-on delay is 23ns, fall time is 22ns, and turn-off delay is 70ns.