N-Channel Power MOSFET featuring 800V Drain to Source Breakdown Voltage and 16A Continuous Drain Current. This silicon Metal-oxide Semiconductor FET offers a low 600mR Drain to Source On Resistance and a maximum power dissipation of 460W. Designed for through-hole mounting in a TO-247AD package, it operates from -55°C to 150°C and includes a 5V threshold voltage with a 4.6nF input capacitance. The component boasts a 29ns fall time and 75ns turn-off delay time, with RoHS compliance.
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Ixys IXFH16N80P technical specifications.
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 600MR |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 460W |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 75ns |
| RoHS | Compliant |
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