IXFH18N60P

600V 18A N-Channel MOSFET TO-247AD, 400mR Rds(on)

N-Channel Power MOSFET, 600V Drain-Source Voltage, 18A Continuous Drain Current, 400mΩ Rds On. Features 360W Max Power Dissipation, 2.5nF Input Capacitance, and 22ns Fall Time. Operates from -55°C to 150°C with a 30V Gate-Source Voltage rating. Packaged in TO-247AD for through-hole mounting, this RoHS compliant component is designed for high-performance applications.

PackageTO-247AD

Current Rating18A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Ixys IXFH18N60P technical specifications.

General

Package/Case	TO-247AD
Continuous Drain Current (ID)	18A
Current Rating	18A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	400mR
Drain to Source Voltage (Vdss)	600V
Fall Time	22ns
Gate to Source Voltage (Vgs)	30V
Height	21.46mm
Input Capacitance	2.5nF
Lead Free	Lead Free
Length	16.26mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	360W
Mount	Through Hole
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	360W
Rds On Max	400mR
RoHS Compliant	Yes
Series	HiPerFET™, PolarHT™
Turn-Off Delay Time	62ns
Turn-On Delay Time	21ns
DC Rated Voltage	600V
Width	5.3mm