N-Channel Power MOSFET, 600V Drain-Source Voltage, 18A Continuous Drain Current, 400mΩ Rds On. Features 360W Max Power Dissipation, 2.5nF Input Capacitance, and 22ns Fall Time. Operates from -55°C to 150°C with a 30V Gate-Source Voltage rating. Packaged in TO-247AD for through-hole mounting, this RoHS compliant component is designed for high-performance applications.
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Ixys IXFH18N60P technical specifications.
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.46mm |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 21ns |
| DC Rated Voltage | 600V |
| Width | 5.3mm |
| RoHS | Compliant |
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