The IXFH20N100P is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a maximum power dissipation of 660W and a drain to source breakdown voltage of 1kV. The device has a continuous drain current of 20A and a drain to source resistance of 570mR. It is packaged in a TO-247 flange mount package and is compliant with lead-free and RoHS regulations.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power660W
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Technical Specifications
Ixys IXFH20N100P technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 570mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 7.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 660W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 660W |
| Radiation Hardening | No |
| Rds On Max | 570mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Turn-Off Delay Time | 56ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH20N100P Datasheet
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