The IXFH20N50P3 is a high-power N-channel MOSFET from Ixys, featuring a maximum drain to source voltage of 500V and a continuous drain current of 20A. It is packaged in a TO-247-3 case and is designed for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 380W. The IXFH20N50P3 is RoHS compliant and is available in rail or tube packaging.
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Ixys IXFH20N50P3 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 500V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.46mm |
| Input Capacitance | 1.8nF |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 300mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, Polar3™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 10ns |
| Width | 5.3mm |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFH20N50P3 to view detailed technical specifications.
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