N-channel silicon power MOSFET, 600V drain-source breakdown voltage, 20A continuous drain current, and 350mΩ maximum drain-source on-resistance. Features a TO-247AD package for through-hole mounting, 300W maximum power dissipation, and a 4.5V nominal gate-source voltage. Operates from -55°C to 150°C with a 4.5nF input capacitance and 40ns fall time. RoHS compliant and lead-free.
PackageTO-247AD
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH20N60 technical specifications.
General
Package/Case
TO-247AD
Continuous Drain Current (ID)
20A
Current Rating
20A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
350mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
350MR
Dual Supply Voltage
600V
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.5nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Nominal Vgs
4.5V
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
350mR
Reach SVHC Compliant
No
Reverse Recovery Time
250ns
RoHS Compliant
Yes
Series
HiPerFET™
Termination
Through Hole
Threshold Voltage
4.5V
Turn-Off Delay Time
70ns
DC Rated Voltage
600V
Weight
6g
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH20N60 Datasheet
Download the complete datasheet for Ixys IXFH20N60 to view detailed technical specifications.
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