N-channel silicon power MOSFET, 600V drain-source breakdown voltage, 20A continuous drain current, and 350mΩ maximum drain-source on-resistance. Features a TO-247AD package for through-hole mounting, 300W maximum power dissipation, and a 4.5V nominal gate-source voltage. Operates from -55°C to 150°C with a 4.5nF input capacitance and 40ns fall time. RoHS compliant and lead-free.
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Ixys IXFH20N60 technical specifications.
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 350MR |
| Dual Supply Voltage | 600V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Nominal Vgs | 4.5V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 350mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 250ns |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Through Hole |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 70ns |
| DC Rated Voltage | 600V |
| Weight | 6g |
| RoHS | Compliant |
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