Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
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Ixys IXFH21N50Q technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 250MR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 280W |
| Rds On Max | 250mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 51ns |
| RoHS | Compliant |
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