IXYS

IXFH22N50P

Datasheet

500V 22A N-CH MOSFET TO-247 270mR Rds(on)

Ixys

IXFH22N50P

Name: IXFH22N50P Ixys
Brand: Ixys
SKU: IXFH22N50P

500V 22A N-CH MOSFET TO-247 270mR Rds(on)

N-Channel Power MOSFET, 500V Drain-Source Breakdown Voltage, 22A Continuous Drain Current, and 270mΩ Drain-Source Resistance. Features a 350W maximum power dissipation and a TO-247 package for through-hole mounting. Operates across a wide temperature range from -55°C to 150°C. Includes a 2.63nF input capacitance and 21ns fall time.

PackageTO-247

Current Rating22A

MountingThrough Hole

PolarityN-CHANNEL

Quick Jump:

Technical Specifications

Ixys IXFH22N50P technical specifications.

General

Package/Case	TO-247
Continuous Drain Current (ID)	22A
Current Rating	22A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	270mR
Drain to Source Voltage (Vdss)	500V
Fall Time	21ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	2.63nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	350W
Mount	Through Hole
Number of Elements	1
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	350W
Radiation Hardening	No
Rds On Max	270mR
RoHS Compliant	Yes
Series	PolarHV™ HiPerFET™
Turn-Off Delay Time	72ns
DC Rated Voltage	500V