N-Channel Power MOSFET, 500V Drain-Source Breakdown Voltage, 22A Continuous Drain Current, and 270mΩ Drain-Source Resistance. Features a 350W maximum power dissipation and a TO-247 package for through-hole mounting. Operates across a wide temperature range from -55°C to 150°C. Includes a 2.63nF input capacitance and 21ns fall time.
PackageTO-247
Current Rating22A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Ixys IXFH22N50P datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Ixys IXFH22N50P technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 22A |
| Current Rating | 22A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.63nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 350W |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ HiPerFET™ |
| Turn-Off Delay Time | 72ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH22N50P Datasheet
Download the complete datasheet for Ixys IXFH22N50P to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
