N-Channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 22A Continuous Drain Current, and 350mΩ Rds On. Features a 400W Max Power Dissipation and operates within a -55°C to 150°C temperature range. This silicon Metal-oxide Semiconductor FET is designed for through-hole mounting in a TO-247 package. Includes 3.6nF input capacitance and 23ns fall time. RoHS compliant and lead-free.
PackageTO-247
Current Rating22A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH22N60P technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 22A |
| Current Rating | 22A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Rds On Max | 350mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Threshold Voltage | 5.5V |
| Turn-Off Delay Time | 60ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH22N60P Datasheet
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