IXYS

IXFH22N60P3

Datasheet

600V 22A N-Channel MOSFET TO-247 360mR Rds(on)

Ixys

IXFH22N60P3

Name: IXFH22N60P3 Ixys
Brand: Ixys
SKU: IXFH22N60P3

600V 22A N-Channel MOSFET TO-247 360mR Rds(on)

N-Channel Power MOSFET, 600V Vds, 22A Continuous Drain Current (ID), and 360mΩ Rds On. This silicon metal-oxide semiconductor FET features a TO-247 package for through-hole mounting, a maximum power dissipation of 500W, and an operating temperature range of -55°C to 150°C. Key switching characteristics include a 28ns turn-on delay, 19ns fall time, and 54ns turn-off delay, with an input capacitance of 2.6nF.

PackageTO-247

MountingThrough Hole

PolarityN-CHANNEL

Power500W

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Technical Specifications

Ixys IXFH22N60P3 technical specifications.

General

Package/Case	TO-247
Continuous Drain Current (ID)	22A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	360mR
Drain to Source Voltage (Vdss)	600V
Fall Time	19ns
Gate to Source Voltage (Vgs)	30V
Height	21.46mm
Input Capacitance	2.6nF
Length	16.26mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	500W
Mount	Through Hole
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	500W
Rds On Max	360mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	Polar3™ HiPerFET™
Threshold Voltage	5V
Turn-Off Delay Time	54ns
Turn-On Delay Time	28ns
Width	5.3mm