N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 23A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 320mΩ drain-source resistance at a nominal Vgs of 4.5V. Designed for through-hole mounting in a TO-247AD plastic package, it boasts a maximum power dissipation of 400W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 20ns fall time and 45ns turn-off delay.
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Ixys IXFH23N60Q technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 320mR |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 600V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.3nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Nominal Vgs | 4.5V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Rds On Max | 320mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 250ns |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Through Hole |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 45ns |
| Weight | 6g |
| RoHS | Compliant |
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