Ixys
IXFH23N80Q
Power Field-Effect Transistor, 23A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3
Power Field-Effect Transistor, 23A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXFH23N80Q technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 420mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 420mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 74ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH23N80Q Datasheet
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