N-Channel Power MOSFET, 500V Drain-Source Breakdown Voltage, 24A Continuous Drain Current, and 230mΩ Maximum Drain-Source On-Resistance. Features a 300W maximum power dissipation and operates within a temperature range of -55°C to 150°C. This through-hole mounted component utilizes a TO-247AD package and offers a 16ns fall time and 55ns turn-off delay time. Input capacitance is 3.9nF, with a gate-to-source voltage rating of 20V.
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Ixys IXFH24N50Q technical specifications.
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 230mR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 230mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 55ns |
| RoHS | Compliant |
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