The IXFH26N50P3 is a high-power MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 26A and a drain to source voltage of 500V. The device is packaged in a TO-247-3 case and is suitable for through-hole mounting. It has an input capacitance of 2.22nF and a maximum power dissipation of 500W.
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Ixys IXFH26N50P3 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Voltage (Vdss) | 500V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.46mm |
| Input Capacitance | 2.22nF |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 500W |
| Radiation Hardening | No |
| Rds On Max | 230mR |
| Series | HiPerFET™, Polar3™ |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 21ns |
| Width | 5.3mm |
| RoHS | Compliant |
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