N-Channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 26A Continuous Drain Current, and 0.25ohm Rds On. This silicon, metal-oxide semiconductor FET features a TO-247AD package for through-hole mounting. Key specifications include a 360W maximum power dissipation, 16ns fall time, and 4.5V nominal gate-source threshold voltage. The component is RoHS compliant and operates within a temperature range of -55°C to 150°C.
PackageTO-247AD
Current Rating26A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH26N60Q technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 26A |
| Current Rating | 26A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 600V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Nominal Vgs | 4.5V |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Radiation Hardening | No |
| Rds On Max | 250mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 250ns |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Through Hole |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 80ns |
| DC Rated Voltage | 600V |
| Weight | 6g |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH26N60Q Datasheet
Download the complete datasheet for Ixys IXFH26N60Q to view detailed technical specifications.
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