N-Channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 28A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 260mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-247 plastic package, it operates within a temperature range of -55°C to 150°C and supports a maximum power dissipation of 695W. Key switching characteristics include a 19ns fall time, 48ns turn-off delay, and 27ns turn-on delay.
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Ixys IXFH28N60P3 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 260mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.46mm |
| Input Capacitance | 3.56nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 695W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 695W |
| Rds On Max | 260mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, Polar3™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 27ns |
| Width | 5.3mm |
| RoHS | Compliant |
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