N-Channel Power MOSFET, 400V Vds, 30A Continuous Drain Current (ID), and 160mΩ Max Drain-Source On-Resistance (Rds On). Features a 4V Threshold Voltage, 12ns Fall Time, and 51ns Turn-Off Delay Time. With 3.3nF Input Capacitance and 300W Max Power Dissipation, this silicon Metal-oxide Semiconductor FET is designed for through-hole mounting in a TO-247 package. Operates from -55°C to 150°C and is RoHS compliant.
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Ixys IXFH30N40Q technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 160mR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 160mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 51ns |
| RoHS | Compliant |
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