N-Channel Power MOSFET, 600V Drain-Source Voltage, 30A Continuous Drain Current, and 240mΩ Rds On. Features a TO-247 package for through-hole mounting, 500W maximum power dissipation, and operates from -55°C to 150°C. Includes 25ns fall time and 80ns turn-off delay time. This silicon Metal-oxide Semiconductor FET is RoHS compliant.
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Ixys IXFH30N60P technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Radiation Hardening | No |
| Rds On Max | 240mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 80ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
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