N-Channel Power MOSFET, 100V Vds, 320A continuous drain current, and 3.5mΩ Rds(on). Features a maximum power dissipation of 1kW and operates within a temperature range of -55°C to 175°C. This silicon Metal-oxide Semiconductor FET utilizes TrenchT2™ technology and is housed in a TO-247-3 plastic package for through-hole mounting. Includes input capacitance of 26nF, turn-off delay time of 73ns, and fall time of 177ns. RoHS compliant and lead-free.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power1kW
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Technical Specifications
Ixys IXFH320N10T2 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 320A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 3.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 177ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 26nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1kW |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1kW |
| Rds On Max | 3.5mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, TrenchT2™ |
| Turn-Off Delay Time | 73ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH320N10T2 Datasheet
Download the complete datasheet for Ixys IXFH320N10T2 to view detailed technical specifications.
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