N-Channel Power MOSFET, 75V Drain-Source Voltage, 340A Continuous Drain Current, and 3.2mΩ Rds On Max. This silicon, metal-oxide semiconductor FET features a low input capacitance of 19nF and a maximum power dissipation of 935W. Designed for through-hole mounting in a TO-247 plastic package, this component is lead-free and RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Ixys IXFH340N075T2 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 340A |
| Drain to Source Voltage (Vdss) | 75V |
| Input Capacitance | 19nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 935W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Rds On Max | 3.2mR |
| RoHS Compliant | Yes |
| Series | TrenchT2™ HiPerFET™ |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFH340N075T2 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
