N-Channel Power MOSFET, 75V Drain-Source Voltage, 340A Continuous Drain Current, and 3.2mΩ Rds On Max. This silicon, metal-oxide semiconductor FET features a low input capacitance of 19nF and a maximum power dissipation of 935W. Designed for through-hole mounting in a TO-247 plastic package, this component is lead-free and RoHS compliant.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXFH340N075T2 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 340A |
| Drain to Source Voltage (Vdss) | 75V |
| Input Capacitance | 19nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 935W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Rds On Max | 3.2mR |
| RoHS Compliant | Yes |
| Series | TrenchT2™ HiPerFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH340N075T2 Datasheet
Download the complete datasheet for Ixys IXFH340N075T2 to view detailed technical specifications.
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