N-Channel Power MOSFET, 500V Vds, 36A continuous drain current, and 170mΩ Rds On. Features a TO-247AD package for through-hole mounting, 540W maximum power dissipation, and operates from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 25ns and fall time of 21ns. Silicon metal-oxide semiconductor construction with RoHS compliance.
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Ixys IXFH36N50P technical specifications.
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 36A |
| Current Rating | 36A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.46mm |
| Input Capacitance | 5.5nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 540W |
| Radiation Hardening | No |
| Rds On Max | 170mR |
| RoHS Compliant | Yes |
| Series | Polar™ HiPerFET™ |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 500V |
| Width | 5.3mm |
| RoHS | Compliant |
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