N-Channel Power MOSFET featuring 300V drain-source breakdown voltage and 40A continuous drain current. Offers a low 85mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this silicon Metal-oxide Semiconductor FET boasts a maximum power dissipation of 300W. Key switching characteristics include a 12ns fall time and 40ns turn-off delay time.
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Ixys IXFH40N30Q technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 40A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 80MR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 40ns |
| DC Rated Voltage | 300V |
| RoHS | Compliant |
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