N-Channel Power MOSFET, 600V Vds, 42A Continuous Drain Current (ID), and 185mΩ Rds On. Features a TO-247 plastic package for through-hole mounting. Designed with a 4.5V threshold voltage and 30V gate-source voltage rating. Offers a maximum power dissipation of 830W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with a 17ns fall time and 32ns turn-on delay.
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Ixys IXFH42N60P3 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 185mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.46mm |
| Input Capacitance | 5.15nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 830W |
| Rds On Max | 185mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Polar3™ HiPerFET™ |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 32ns |
| Width | 5.3mm |
| RoHS | Compliant |
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