Power Field-Effect Transistor, 44A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
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Ixys IXFH44N50Q3 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 44A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 500V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.26mm |
| Input Capacitance | 4.8nF |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 830W |
| Rds On Max | 140mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 30ns |
| Width | 5.3mm |
| RoHS | Compliant |
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