N-Channel Power MOSFET, 300V Vds, 50A Continuous Drain Current (ID), and 80mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-247 plastic package for through-hole mounting. With a maximum power dissipation of 690W and operating temperatures from -55°C to 150°C, it offers fast switching with turn-on and turn-off delay times of 14ns and 24ns respectively. Input capacitance is 3.16nF, and the device is lead-free and RoHS compliant.
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| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 300V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.26mm |
| Input Capacitance | 3.16nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 690W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 690W |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 14ns |
| Width | 5.3mm |
| RoHS | Compliant |
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