The IXFH50N50P3 is a 50A, 500V MOSFET from Ixys, packaged in a TO-247-3 through hole package. It has a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 960W. The device has an input capacitance of 4.335nF and a maximum Rds on resistance of 120mR. The IXFH50N50P3 is part of the HiPerFET and Polar3 series.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXFH50N50P3 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 500V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.46mm |
| Input Capacitance | 4.335nF |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 120mR |
| Series | HiPerFET™, Polar3™ |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 25ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH50N50P3 Datasheet
Download the complete datasheet for Ixys IXFH50N50P3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.