N-Channel Power MOSFET, 300V Vds, 52A Continuous Drain Current (ID), and 66mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a TO-247 package for through-hole mounting. It offers a maximum power dissipation of 400W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 24ns turn-on delay and 20ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power400W
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Technical Specifications
Ixys IXFH52N30P technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 52A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 66mR |
| Drain to Source Voltage (Vdss) | 300V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.46mm |
| Input Capacitance | 3.49nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Box |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Rds On Max | 66mR |
| RoHS Compliant | Yes |
| Series | PolarHT™ HiPerFET™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 24ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH52N30P Datasheet
Download the complete datasheet for Ixys IXFH52N30P to view detailed technical specifications.
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