N-Channel Power MOSFET, 300V Drain-Source Breakdown Voltage, 52A Continuous Drain Current, and 60mΩ Drain-Source Resistance. This silicon Metal-Oxide-Semiconductor FET features a TO-247AD package for through-hole mounting, a maximum power dissipation of 360W, and a nominal gate-source threshold voltage of 4V. It offers a fast fall time of 25ns and a reverse recovery time of 250ns, operating within a temperature range of -55°C to 150°C.
PackageTO-247AD
Current Rating52A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH52N30Q technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 52A |
| Current Rating | 52A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 300V |
| Dual Supply Voltage | 300V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.3nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 250ns |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Through Hole |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 80ns |
| DC Rated Voltage | 300V |
| Weight | 6g |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH52N30Q Datasheet
Download the complete datasheet for Ixys IXFH52N30Q to view detailed technical specifications.
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