IXFH52N30Q

N-Channel Power MOSFET, 300V Drain-Source Breakdown Voltage, 52A Continuous Drain Current, and 60mΩ Drain-Source Resistance. This silicon Metal-Oxide-Semiconductor FET features a TO-247AD package for through-hole mounting, a maximum power dissipation of 360W, and a nominal gate-source threshold voltage of 4V. It offers a fast fall time of 25ns and a reverse recovery time of 250ns, operating within a temperature range of -55°C to 150°C.