N-Channel Power MOSFET, 200V Drain-Source Breakdown Voltage, 58A Continuous Drain Current. Features 40mΩ maximum Drain-Source On-Resistance and 300W maximum power dissipation. Operates with a 20V Gate-to-Source voltage and exhibits a 13ns fall time and 40ns turn-off delay. Packaged in a TO-247-3 through-hole mount, this RoHS compliant silicon metal-oxide semiconductor FET is suitable for demanding applications.
PackageTO-247-3
Current Rating58A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH58N20Q technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 58A |
| Current Rating | 58A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 40MR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 40ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH58N20Q Datasheet
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