The IXFH60N20 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 60A and a drain to source breakdown voltage of 200V. The device is packaged in a TO-247-3 package and is RoHS compliant. It has a maximum power dissipation of 300W and a gate to source voltage of 20V.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXFH60N20 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 33mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.2nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 33mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 85ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH60N20 Datasheet
Download the complete datasheet for Ixys IXFH60N20 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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