Ixys
IXFH60N20
Power Field-Effect Transistor, 60A I(D), 200V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXFH60N20 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
60A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
33mR
Drain to Source Voltage (Vdss)
200V
Fall Time
26ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.2nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
33mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
85ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH60N20 Datasheet
Download the complete datasheet for Ixys IXFH60N20 to view detailed technical specifications.
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