Ixys
IXFH60N25Q
Power Field-Effect Transistor, 60A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXFH60N25Q technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
60A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
47mR
Drain to Source Voltage (Vdss)
250V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.1nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
360W
Rds On Max
47mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
80ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH60N25Q Datasheet
Download the complete datasheet for Ixys IXFH60N25Q to view detailed technical specifications.
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