N-Channel Power MOSFET, 500V Drain to Source Breakdown Voltage, 60A Continuous Drain Current, and 100mΩ Drain to Source Resistance. Features include a 5V Threshold Voltage, 6.25nF Input Capacitance, and 1.04kW Max Power Dissipation. This silicon Metal-oxide Semiconductor FET is housed in a TO-247 package with through-hole mounting. Operating temperature range is -55°C to 150°C.
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Ixys IXFH60N50P3 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.46mm |
| Input Capacitance | 6.25nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.04kW |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Polar3™ HiPerFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 18ns |
| Width | 5.3mm |
| RoHS | Compliant |
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