
N-Channel Power MOSFET, 1000V Drain-Source Voltage, 6A Continuous Drain Current, 2 Ohm Drain-Source On-Resistance. Features 180W Max Power Dissipation, 150°C Max Operating Temperature, and TO-247 package. Includes 2.6nF Input Capacitance, 60ns Fall Time, and 100ns Turn-Off Delay. RoHS compliant with through-hole mounting.
Ixys IXFH6N100 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 6A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 2R |
| Dual Supply Voltage | 1kV |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Nominal Vgs | 4.5V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 180W |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 100ns |
| DC Rated Voltage | 1kV |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFH6N100 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
