N-Channel Power MOSFET, 1000V Drain-Source Voltage, 6A Continuous Drain Current, 2 Ohm Drain-Source On-Resistance. Features 180W Max Power Dissipation, 150°C Max Operating Temperature, and TO-247 package. Includes 2.6nF Input Capacitance, 60ns Fall Time, and 100ns Turn-Off Delay. RoHS compliant with through-hole mounting.
PackageTO-247-3
Current Rating6A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH6N100 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
6A
Current Rating
6A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
1kV
Drain-source On Resistance-Max
2R
Dual Supply Voltage
1kV
Fall Time
60ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.6nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
180W
Mount
Through Hole
Nominal Vgs
4.5V
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
180W
Rds On Max
2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HiPerFET™
Threshold Voltage
4.5V
Turn-Off Delay Time
100ns
DC Rated Voltage
1kV
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH6N100 Datasheet
Download the complete datasheet for Ixys IXFH6N100 to view detailed technical specifications.
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