N-Channel Power MOSFET, 200V Vdss, 70A Continuous Drain Current (ID), and 40mΩ Max Drain-Source On-Resistance (Rds On). Features a TO-247 plastic package for through-hole mounting, with a maximum power dissipation of 690W and an operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 17ns and fall time of 9ns. This RoHS compliant component offers a gate-to-source voltage of 30V and input capacitance of 3.15nF.
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Ixys IXFH70N20Q3 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 40MR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.26mm |
| Input Capacitance | 3.15nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 690W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 690W |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 17ns |
| Width | 5.3mm |
| RoHS | Compliant |
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