N-Channel Power MOSFET featuring 70V drain-source breakdown voltage and 76A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 12mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 360W. Key electrical characteristics include 4.4nF input capacitance and 55ns fall time.
PackageTO-247-3
Current Rating76A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH76N07-12 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 76A |
| Current Rating | 76A |
| Drain to Source Breakdown Voltage | 70V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 70V |
| Drain-source On Resistance-Max | 12MR |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 130ns |
| DC Rated Voltage | 70V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH76N07-12 Datasheet
Download the complete datasheet for Ixys IXFH76N07-12 to view detailed technical specifications.
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