The IXFH7N80 is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current rating of 7A and a maximum power dissipation of 180W. The device is packaged in a TO-247-3 package and is RoHS compliant. It features a drain to source breakdown voltage of 800V and a drain to source resistance of 1.4R.
PackageTO-247-3
Current Rating7A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH7N80 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 7A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 180W |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 100ns |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH7N80 Datasheet
Download the complete datasheet for Ixys IXFH7N80 to view detailed technical specifications.
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