N-Channel Power MOSFET, 100V Vds, 80A Continuous Drain Current (ID), and 15mΩ Max Drain-Source On-Resistance (Rds On). Features a TO-247AD package for through-hole mounting, 360W max power dissipation, and operates from -55°C to 150°C. Includes 30ns fall time and 68ns turn-off delay time. RoHS compliant and lead-free.
PackageTO-247AD
Current Rating80A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH80N10Q technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 150mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Radiation Hardening | No |
| Rds On Max | 15mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 68ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH80N10Q Datasheet
Download the complete datasheet for Ixys IXFH80N10Q to view detailed technical specifications.
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