Trans MOSFET N-CH 500V 13A 3-Pin(2+Tab) TO-268
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power180W
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Technical Specifications
Ixys IXFJ13N50 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 180W |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 76ns |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.