N-Channel Power MOSFET, 100V Vdss, 100A Continuous Drain Current, and 12mR Max Drain-Source On Resistance. Features a 500W Max Power Dissipation and operates across a -55°C to +150°C temperature range. This single-element silicon FET is housed in a TO-264AA plastic package with through-hole mounting. RoHS compliant and lead-free.
PackageTO-264AA
MountingThrough Hole
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXFK100N10 technical specifications.
General
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 12MR |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 100ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK100N10 Datasheet
Download the complete datasheet for Ixys IXFK100N10 to view detailed technical specifications.
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