The IXFK100N25 is a high-power N-channel MOSFET with a maximum drain-to-source breakdown voltage of 250V and a continuous drain current of 100A. It has a maximum power dissipation of 560W and a drain-to-source resistance of 27mR. The device is packaged in a TO-264-3 flange mount package and is RoHS compliant. The IXFK100N25 operates over a temperature range of -55°C to 150°C and has a fall time of 40ns and a turn-off delay time of 110ns.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power560W
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Ixys IXFK100N25 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Ixys IXFK100N25 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| Rds On Max | 27mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK100N25 Datasheet
Download the complete datasheet for Ixys IXFK100N25 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.