The IXFK102N30P is a high-power N-channel MOSFET from Ixys with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 300V and a continuous drain current of 102A. The device has a maximum power dissipation of 700W and a gate to source voltage of 20V. The IXFK102N30P is packaged in a TO-264-3 package and is mounted through a hole. It is compliant with RoHS regulations.
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| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 102A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 33mR |
| Drain to Source Voltage (Vdss) | 300V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Box |
| Polarity | N-CHANNEL |
| Power Dissipation | 700W |
| Rds On Max | 33mR |
| RoHS Compliant | Yes |
| Series | PolarHT™ HiPerFET™ |
| Turn-Off Delay Time | 130ns |
| RoHS | Compliant |
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