The IXFK120N30P3 is a high-power MOSFET from Ixys with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 1.13kW and a maximum drain to source voltage of 300V. The device has a continuous drain current of 120A and a maximum Rds on resistance of 27mΩ. It is packaged in a TO-264-3 package and is designed for through hole mounting.
PackageTO-264-3
MountingThrough Hole
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Technical Specifications
Ixys IXFK120N30P3 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 300V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 26.16mm |
| Input Capacitance | 8.63nF |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.13kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Rds On Max | 27mR |
| Series | HiPerFET™, Polar3™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 26ns |
| Width | 5.13mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK120N30P3 Datasheet
Download the complete datasheet for Ixys IXFK120N30P3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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