The IXFK120N30T is a high-power N-channel MOSFET from Ixys, featuring a maximum operating temperature range of -55°C to 150°C. With a maximum power dissipation of 960W, this device is suitable for demanding applications. The TO-264-3 package type allows for through-hole mounting, and the RoHS compliance ensures environmental responsibility. The MOSFET has a maximum drain to source voltage of 300V and a continuous drain current of 120A, with a maximum Rds on of 24mR.
PackageTO-264-3
MountingThrough Hole
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Technical Specifications
Ixys IXFK120N30T technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 300V |
| Input Capacitance | 20nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 24mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK120N30T Datasheet
Download the complete datasheet for Ixys IXFK120N30T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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