N-Channel Power MOSFET with 300V Drain-Source Voltage (Vdss) and 140A Continuous Drain Current (ID). Features low 24mR drain-source on-resistance (Rds On Max) and 1.04kW maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-264 through-hole plastic case, this silicon Metal-oxide Semiconductor FET offers a 5V threshold voltage and 20V gate-source voltage. RoHS compliant with a 20ns fall time and 100ns turn-off delay.
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| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 140A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 24MR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 14.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.04kW |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 100ns |
| RoHS | Compliant |
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