The IXFK15N100Q is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 15A and a drain to source breakdown voltage of 1kV. The device has a maximum power dissipation of 360W and a gate to source voltage of 20V. It is packaged in a TO-264-3 package and is available in a rail/Tube packaging with 25 devices per package. The IXFK15N100Q is RoHS compliant and part of the HiPerFET series.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXFK15N100Q technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 700mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 700mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 67ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK15N100Q Datasheet
Download the complete datasheet for Ixys IXFK15N100Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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